產(chǎn)品概述General Description                                                                          

DG2N65是N溝道增強(qiáng)型場效應(yīng)晶體管，應(yīng)用了東光微電的相關(guān)技術(shù)，采用自對準(zhǔn)平面工藝及的終端耐壓技術(shù)，降低了導(dǎo)通損耗，了開關(guān)特性，增強(qiáng)了雪崩耐量。該產(chǎn) 品能應(yīng)用于多種功率開關(guān)電路，使得電源能效更高，系統(tǒng)更加小型化。

DG2N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching

circuit for higher efficiency and system miniaturization.