FJP13009
High Voltage Fast-Switching NPN Power Transistor
•High Voltage Capability
•High Switching Speed
•Suitable for Eleronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings* TC = 25°C unls otherwise ted (t_1)
* The ratings are limiting valu above which the serviceability of any semiconduor device may be impaired.
T_1:
1) The ratings are based on a maximum junion temperature of 150°C.
2) The are steady state limits. The faory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
t_2 :
1) The Affix “-H2” means the hFE clification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website 
                                                
VCBO (Colleor-Base Voltage)       700 V
VCEO (Colleor-Emitter Voltage)    400 V
VEBO (Emitter-Base Voltage)           9  V
IC (Colleor Current (DC))            12  A
ICP (Colleor Current (Pulse))      24  A
IB  (Base Current)   6 A
PC (Colleor Dissipation (TC = 25°C))  130 W
TJ (Junion Temperature)  150  °C
TSTG (Storage Temperature Range)  -65 ~ 150 °C